P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits

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P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits

Name: P Channel Mosfet digital integrated circuits IRLML6402TRPBF Digital IC Circuits
Brand: Original Brand
Price: 1 USD

Buy cheap P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits product

Brand Name : Original Brand

Model Number : IRLML6402TRPBF

Certification : SGS

Place of Origin : CN

MOQ : 100

Price : Negotiation

Payment Terms : T/T, Western Union, MoneyGram

Packaging Details : plastic +carton

Package : SOT-23-3

Application : computer

Type : Fast Switching

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Original P-Channel Mosfet IRLML6402TRPBF/ Integrated Circuit IC

P-Channel

Description:

These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a Power
MOSFET with the industry's smallest footprint. This package,
, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.

Feature:

Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching

Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	50	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	35
IDM	Pulsed Drain Current	200
PD @TC = 25°C	Power Dissipation	300	W
	Linear Derating Factor	2.0	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	560	mJ
IAR	Avalanche Current	50	A
EAR	Repetitive Avalanche Energy	30	mJ
dv/dt	Peak Diode Recovery dv/dt	10	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Contact Details:
Contact: Angel Sun
Tel: +86-13528847020
Email: Admin@winsunhk.cn
Skype: Angelsun618
Whatsapp: 13528847020
Wechat: 13528847020
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Product Tags:

ic integrated circuit

digital integrated circuits

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